Method of forming isolation layer of semiconductor elements

Details Method of forming isolation layer of semiconductor elements Method of forming isolation layer of semiconductor elements

1996-12-19

1998-07-28

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438297, 438452, H01L 2176

Patent

active

057862648

ABSTRACT:
A method of forming an isolation layer of a semiconductor device, comprising the steps of defining a semiconductor substrate with a cell region and a peripheral region; forming a first buffer layer on the peripheral region of the semiconductor substrate; forming a second buffer layer on the cell region of the semiconductor substrate and on the first buffer layer; forming an anti-oxidation layer on the second buffer layer to define an active region; and forming a field insulation layer in the cell and peripheral regions of the substrate by oxidation.

REFERENCES:
patent: 5049520 (1991-09-01), Cathey
patent: 5134089 (1992-07-01), Barden
patent: 5332682 (1994-07-01), Lowrey
patent: 5455438 (1995-10-01), Hashimoto et al.
Andes Bryant, et al., The Current-Carrying Corner Inherent to Trench Isolation, IEEE Electron Device Letters, vol., 14, No. 8, pp. 412-414, Aug. 1993.

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