Field effect transistor capable of easily adjusting switching sp

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257327, 257538, H01L 2976, H01L 2994, H01L 2900

Patent

active

052276554

ABSTRACT:
Herein disclosed is a vertical-type field effect transistor having a parallel connection of a diode and a resistor between the gate bonding pad and the gate electrode of the transistor to adjust the switching speed of the transistor without changing the other properties of the transistor.

REFERENCES:
patent: 4688323 (1987-08-01), Yoshida et al.
patent: 4730208 (1988-03-01), Sugino et al.
patent: 4757363 (1988-07-01), Bohm et al.
patent: 4760434 (1988-07-01), Tsuzuki et al.
patent: 4920388 (1990-04-01), Blanchard et al.
patent: 5012313 (1991-04-01), Fujihira

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