Spectrum analyzer in an ion implanter

Details Spectrum analyzer in an ion implanter Spectrum analyzer in an ion implanter

1994-08-30

1995-10-10

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, 250391, 250305, H01J 37317

Patent

active

054573246

ABSTRACT:
An ion implanter for implanting ions into a semiconductor wafer comprises means for generating an ion beam, means for receiving charged particles ejected from the ion beam, first means for rejecting those of the received charged particles below a first predetermined energy, second means for rejecting those of the received charged particles above a second predetermined energy, the first predetermined energy being lower than the second predetermined energy. The ion implanter further comprises means to count the number of received charged particles between the first and second predetermined energies, and scanning means for scanning the first and second predetermined energies to determine the energy at which the number of received charged particles between the first and second predetermined energies is a maximum.

REFERENCES:
patent: 3857090 (1974-12-01), Chick
patent: 5113074 (1992-05-01), Sferlazzo
patent: 5198676 (1993-03-01), Benveniste et al.
patent: 5384465 (1995-01-01), Armour et al.

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