Method of manufacturing a semiconductor device using an isopropy

Details Method of manufacturing a semiconductor device using an isopropy Method of manufacturing a semiconductor device using an isopropy

1992-02-06

1993-07-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437245, 427532, 427533, 427534, 156646, 1566591, H01L 2100, H01L 2102, H01L 2147, H01L 21312

Patent

active

052273415

ABSTRACT:
An improved method of manufacturing a semiconductor device includes forming an insulating layer on a substrate, depositing a metal film layer on the insulating layer and depositing a photoresist layer on the metal film layer. The photoresist layer is formed with openings through which a predetermined surface of the metal film layer is exposed. The predetermined surface of the metal film layer is subjected to dry etching so that an underlying portion of the insulating layer is exposed. The remaining portion of the photoresist layer is then subjected to ashing by using an isopropyl alcohol-containing gas to expose the surface of said metal film layer.

REFERENCES:
patent: 3988256 (1976-10-01), Vandermey et al.
patent: 4078102 (1978-03-01), Bendz et al.
patent: 4992108 (1991-02-01), Ward et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device using an isopropy does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device using an isopropy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device using an isopropy will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2311895