Method of fabricating a readable alignment mark structure using

Details Method of fabricating a readable alignment mark structure using Method of fabricating a readable alignment mark structure using

1996-12-16

1998-07-28

Tsai, Jey

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

438975, 148DIG102, H01L 2358

Patent

active

057862605

ABSTRACT:
A structure of a readable alignment mark and method of manufacturing the readable alignment mark in an alignment mark area on a semiconductor substrate. A semiconductor substrate 10 comprising a product area 12 and an alignment mark area 30 is provided. The alignment mark area 30 has an outer area 40 and an inner area 50. The outer area surrounds 40 the inner area 50. A plurality of alignment mark trenches 24 is formed in the substrate 10 within the inner area 50. A pad oxide layer 20 and a silicon nitride layer 44 are formed sequentially in at least the alignment mark area 12. An isolation trench 43 is formed in the substrate 10 in at least the outer area 40. An insulating layer 46 is formed at least over the alignment mark area 30. The insulating layer 46 is chemical-mechanical polished thereby removing a first thickness of the insulating layer from the inner alignment mark area 50 and leaving a residual insulating layer 46A in the alignment mark trenches 48. Etches are used to remove the residual insulating layer 46A, silicon nitride layer 44, and pad oxide layer 42 in the alignment mark area 30 thereby exposing the alignment marks 48 and making the alignment marks readable.

REFERENCES:
patent: 4944836 (1990-07-01), Beyer et al.
patent: 5256591 (1993-10-01), Jun
patent: 5275965 (1994-01-01), Manning
patent: 5456756 (1995-10-01), Ramaswami et al.
patent: 5503962 (1996-04-01), Caldwell
patent: 5640053 (1997-06-01), Caldwell

Affiliated with

Also associated with

Rating

Method of fabricating a readable alignment mark structure using does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a readable alignment mark structure using , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a readable alignment mark structure using will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-23118