Semiconductor device and process for preparing the same

Details Semiconductor device and process for preparing the same Semiconductor device and process for preparing the same

1993-02-17

1996-04-23

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257412, 257507, 257618, 257755, 257768, H01L 2701

Patent

active

055106404

ABSTRACT:
A semiconductor device comprises a semiconductor layer including a source region, a drain region and a channel region provided on an insulating film. A gate insulating film separates the semiconductor layer from a gate electrode. A thickness of the channel region is smaller than a thickness of the source or drain region, and a level of an interface between the channel region and the insulating film is different from a level of an interface of the source or drain region and the insulating film. All the surfaces of the channel region, source region and drain region which face the gate electrode are on the same level.

REFERENCES:
patent: 4072974 (1978-02-01), Ipri
patent: 4741964 (1988-05-01), Haller
patent: 4746961 (1988-05-01), Konishi et al.
S. M. Sze, "VLSI Technology", pp. 372-379 (1983).
Japanese Journal of Applied Physics, Suppl., vol. 22, No. 22-1, Jan. 1983, pp. 457-460, K. Ozawa, et al., "Contact-type Linear Sensor Using Amorphous Si Diode Array".

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