Process for anisotropically etching semiconductor material

Details Process for anisotropically etching semiconductor material Process for anisotropically etching semiconductor material

1994-05-25

1996-04-23

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566511, 1566571, 15665911, 216 67, H01L 21306

Patent

active

055099955

ABSTRACT:
A process of anisotropically etching a semiconductor material, capable of preventing contamination of the semiconductor material and thereby improving the yield of a semiconductor integrated circuit finally fabricated. The process includes a primary etching step of slantly etching a semiconductor layer, formed to be interposed between a lower layer and a photoresist pattern on a semiconductor substrate and partially exposed by the photoresist pattern, at a predetermined angle by using a primary plasma gas ionized by an electric field, thereby selectively exposing the lower layer, and a secondary etching step of directly applying a secondary plasma gas ionized by the electric field to sloped surfaces of the semiconductor layer formed at the primary etching step and scattering the secondary plasma gas toward the sloped surfaces of the semiconductor layer by the exposed portion of the lower layer, whereby the sloped surfaces of the semiconductor layer is vertically etched.

REFERENCES:
patent: 4460435 (1984-07-01), Maa
patent: 4487652 (1984-12-01), Almgren
patent: 4676869 (1987-06-01), Lee et al.
patent: 4889588 (1989-12-01), Fior
patent: 5236549 (1993-08-01), Shirakawa et al.

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