Method for making GaAs-InGaAs high electron mobility transistor

Details Method for making GaAs-InGaAs high electron mobility transistor Method for making GaAs-InGaAs high electron mobility transistor

1996-12-19

1998-07-28

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438191, 438269, 438271, 257194, H01L 21338

Patent

active

057862443

ABSTRACT:
A GaAs-InGaAs high electron mobility transistor includes: a GaAs substrate; a GaAs buffer layer overlaying on the GaAs substrate; a graded InGaAs channel overlaying on the GaAs layer; a GaAs spacer layer overlaying on the graded InGaAs channel layer; a .delta.-doping layer overlaying on the GaAs spacer layer; a GaAs cap layer overlaying on the .delta.-doping layer; drain and source terminals overlaying on the GaAs cap layer and contacting the graded InGaAs channel layer; and a gate terminal overlaying on the GaAs cover layer and located between the drain terminal and the source terminal.

REFERENCES:
patent: 5105241 (1992-04-01), Ando
patent: 5206527 (1993-04-01), Kuwata
patent: 5250822 (1993-10-01), Sonoda et al.

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