Method for forming a thin film semiconductor device utilizing a

Details Method for forming a thin film semiconductor device utilizing a Method for forming a thin film semiconductor device utilizing a

1994-12-28

1998-07-28

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438149, 438596, H01L 2184

Patent

active

057862419

ABSTRACT:
In a thin film transistor (TFT) having an active layer formed on an insulating film, a gate electrode is formed by using a metal material such as aluminum, an gate insulating film is formed by using a silicon insulator such as silicon oxide or silicon nitride. A film is formed on the gate electrode and the gate insulting film by using a silicon material such as amorphous silicon and then etched with anisotropic etching to form side walls made of a silicon material in sides of the gate electrode. In this etching, since an etching rate of the side walls is larger than that of the gate insulating film, the gate insulating film is not almost etched.

REFERENCES:
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patent: 5013675 (1991-05-01), Shen et al.
patent: 5015595 (1991-05-01), Wollesen
patent: 5066613 (1991-11-01), Reedy et al.
patent: 5292675 (1994-03-01), Codama
patent: 5424230 (1995-06-01), Wakai
Zhao et al, "A Novel Floating Gate Spacer Polysilicon", IEDM, Dec. 5-8, 1993, pp. 393-395.

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