Semiconductor device comprising an analogue element and a digita

Details Semiconductor device comprising an analogue element and a digita Semiconductor device comprising an analogue element and a digita

1991-09-06

1993-08-31

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257411, 257500, 257392, 257370, H01L 2994, H01L 2976, H01L 2900, H01L 31062

Patent

active

052412083

ABSTRACT:
A semiconductor device, comprises a semiconductor substrate, a digital element part as a pair of MOS transistors formed on the semiconductor substrate; and an analog element part as a pair of MOS transistors formed on the semiconductor substrate, wherein a gate insulator film of the analogue element part comprises at least a first silicon oxide film and a silicon nitride film, a gate insulator film of the digital element part comprises a second silicon oxide, and the gate insulation film of the analogue element part is thicker than the gate insulation film of the digital element part. A fabrication method of the semiconductor device also is described.

REFERENCES:
patent: 3696276 (1972-10-01), Boland
patent: 5034798 (1991-07-01), Ohsima

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