Self-aligned vertical intrinsic resistance

Details Self-aligned vertical intrinsic resistance Self-aligned vertical intrinsic resistance

1992-10-02

1993-08-31

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257379, 257536, 257537, 257538, 257903, 257904, H01L 2702, H01L 2712, H01L 2701

Patent

active

052412067

ABSTRACT:
A self-aligned vertical intrinsic resistance for use in semiconductor devices is developed. The self-aligned vertical intrinsic resistance may be used in a variety of designs, such as functioning as a pullup device in integrated circuits and more specifically for use as a pullup resistor in SRAM devices. The vertical positioning of the intrinsic resistance not only takes up less die space but also allows for a simple process to construct the resistance by eliminating a photomask step that is normally required prior to implanting an intrinsic resistance used in conventional fabrication processes.

REFERENCES:
patent: 4178674 (1979-12-01), Liu et al.
patent: 4631705 (1986-12-01), Honda
patent: 4690728 (1987-09-01), Tsang et al.
patent: 4828629 (1989-05-01), Ikeda et al.
patent: 4849801 (1989-07-01), Honjyo et al.
patent: 4961103 (1990-10-01), Saitoh et al.
patent: 5034797 (1991-07-01), Tamanaka et al.

Affiliated with

Also associated with

Rating

Self-aligned vertical intrinsic resistance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned vertical intrinsic resistance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned vertical intrinsic resistance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2299886