Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-09-29
1993-08-31
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257401, 257296, 257390, 257499, H01L 2968, H01L 2702, H01L 2710, H01L 2348
Patent
active
052412059
ABSTRACT:
A semiconductor memory device is provided which includes a plurality of memory cells, each of which includes: an active region having an MOS transistor formed in the surface portion of a semiconductor substrate; a gate electrode formed on the substrate for the MOS transistor so as to divide the active region into a source-side active region with a storage contact and a drain-side active region with a bit contact, the portion of the active region which is positioned under the gate electrode functioning as a channel region for the MOS transistor; a first impurity-implanted region formed in a portion of the source-side active region so as to overlap with part of the storage contact and the gate electrode, the portion of the source-side active region which overlaps with the first impurity-implanted region functioning as a source region for the MOS transistor; and a second impurity-implanted region formed in a portion of the drain-side active region so as to overlap with at least one part of the bit contact and the gate electrode, the portion of the drain-side active region which overlaps with the second impurity-implanted region functioning as a drain region for the MOS transistor.
REFERENCES:
patent: 4462090 (1984-06-01), Iizuka
patent: 5134588 (1992-07-01), Kubota et al.
S. Kimura et al, A New Stacked Capacitor DRAM Cell Characterized by a Storage Capacitor on a Bit-line Structure, IEDM 88, pp. 596-599.
K. Torii et al, Three Dimensional Effects on Submicrometer Diagonal MOSFETs, Extended Abstracts of the 21st Conference on Solid State Devices and Materials, Tokyo, 1989, pp. 101-104.
T. Ema et al, 3-Dimensional Stacked Capacitor Cell For 16M and 64M Drams, IEDM 88, pp. 592-595.
Doi Tsukasa
Iguchi Katsuji
Kakimoto Seizo
Shimizu Shin
Prenty Mark V.
Sharp Kabushiki Kaisha
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