Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-08-04
1993-08-31
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257381, 257401, 257903, 365182, H01L 2701, H01L 2702, H01L 2904, G11C 1134
Patent
active
052412040
ABSTRACT:
The invention provides a semiconductor memory which is minimized in leak current and has a high data holding performance. The semiconductor memory comprises a memory cell including a flip-flop in which a thin film transistor is employed as a load element. The thin film transistor has a channel region which is bent at an intermediate portion thereof.
REFERENCES:
patent: 4794561 (1988-12-01), Hsu
patent: 5001539 (1991-03-01), Inoue et al.
patent: 5115289 (1992-05-01), Hisamoto et al.
Prenty Mark V.
Sony Corporation
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