Method for the disintegration of silicon for semiconductor

Details Method for the disintegration of silicon for semiconductor Method for the disintegration of silicon for semiconductor

1984-07-12

1986-01-21

Leung, Philip H.

Electric heating

Metal heating

Of cylinders

219 1055R, 219 1055B, 148 15, 156DIG65, 299 14, 241 23, H05B 680

Patent

active

045659133

ABSTRACT:
A method for the disintegration of silicon for preparation of semiconductor materials. Polycrystalline silicon in a rod form is subjected to microwave radiation in an oven for a short period of time, whereby the rod-like polycrystalline silicon is dielectrically heated quickly from its inside thereby causing it to be disintegrated.

REFERENCES:
patent: 3275787 (1966-09-01), Newberry
patent: 3430021 (1969-02-01), Watson
patent: 3443051 (1969-05-01), Puschner
patent: 3923653 (1975-12-01), Lavins, Jr.
patent: 4138306 (1979-02-01), Niwa
patent: 4196332 (1980-04-01), Mackay et al.
patent: 4314128 (1982-02-01), Chitre
patent: 4474625 (1984-10-01), Cohen et al.

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