Method of preventing dielectric degradation or rupture

Details Method of preventing dielectric degradation or rupture Method of preventing dielectric degradation or rupture

1989-03-14

1990-04-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 43, 437173, 437228, 437923, 156643, H01L 21268

Patent

active

049160826

ABSTRACT:
Charge on a floating gate of a semiconductor device structure is neutralized by illuminating the structure with a high intensity light during process steps that inject charge. The light provides for the formation of electrons, or free carriers, in the semiconductor substrate. The electrons facilitate tunneling which prevents dielectric degradation or rupture.

REFERENCES:
patent: 4004159 (1977-01-01), Rai et al.
patent: 4822748 (1989-04-01), Janesick et al.

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