Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-11-17
1998-03-24
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257903, 257207, 257547, H01L 27092, H01L 2711
Patent
active
057316180
ABSTRACT:
The earth wire is a conductive lead located at the nearest position to a flat surface of the semiconductor substrate, and the earth wire and the word lines are arranged so that these are not formed on the other wires in the memory cell, the wiring resistance is reduced by shortening the wiring length, and there is little unevenness in the underlayer of the earth wire, whereby the read-out operation is stabilized. Furthermore, the earth wire is formed of a wiring layer which is near to the semiconductor substrate, so that the distance between the earth wire and a load element is set to be larger than that in the prior art. Therefore, it can be prevented that the earth wire acts as the gate electrode of a parasitic transistor and thus malfunction occurs. In addition, the shape of the field pattern can be simplified.
REFERENCES:
patent: 4570331 (1986-02-01), Eaton, Jr. et al.
patent: 5243219 (1993-09-01), Katayama
patent: 5396100 (1995-03-01), Yamasaki et al.
patent: 5422499 (1995-06-01), Manning
patent: 5461251 (1995-10-01), Yang et al.
"A Split Wordline Cell for 16Mb SRAM Using Polysilicon Sidewall Contracts," Kazuo Itabashi, et al., Tech. Dig. IEDM 1991, pp. 477-480.
Guay John
Jackson Jerome
Mitsubishi Denki & Kabushiki Kaisha
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