Semiconductor device having bipolar transistor and field effect

Details Semiconductor device having bipolar transistor and field effect Semiconductor device having bipolar transistor and field effect

1996-01-02

1998-03-24

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257378, H01L 2976, H01L 2994

Patent

active

057316171

ABSTRACT:
A semiconductor device with a reduced insulating capacitance between an emitter electrode and a base layer, and a manufacturing method thereof are disclosed. In the semiconductor device, at least first and second insulating layers are interposed between the emitter electrode and the base layer. Preferably, the first insulating layer, a semiconductor layer having insulation characteristics, and the second insulating layer are interposed between the emitter electrode and the base layer.

REFERENCES:
patent: 4669177 (1987-06-01), D'Arrigo et al.
patent: 4780427 (1988-10-01), Sakai et al.
patent: 4892837 (1990-01-01), Kudo
patent: 4931407 (1990-06-01), Maeda et al.
patent: 5005066 (1991-04-01), Chen
patent: 5124271 (1992-06-01), Havemann
patent: 5150184 (1992-09-01), Eklund
patent: 5212398 (1993-05-01), Matsunaga et al.
patent: 5286986 (1994-02-01), Kihara et al.
patent: 5294823 (1994-03-01), Eklund et al.

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