Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-10-17
1998-03-24
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257773, 257 67, 257 68, 257 71, 257 30, 257754, 257306, 257296, H01L 2973, H01L12968, H01L 2992
Patent
active
057316104
ABSTRACT:
A semiconductor device and fabrication process wherein the device includes a conductive layer with a localized thick region positioned below the contact hole. In one embodiment of the invention, the thick region to which contact is made is formed by means of an opening in an underlayer of material. This embodiment of the device includes an underlayer of material having an opening therein; a layer of thin conductive material formed on the underlayer and in the opening; an overlayer of material having a contact hole therethrough formed on the layer of thin conductive material; a conductor contacting the layer of thin conductive material through the contact hole; and wherein the opening in the underlayer is positioned below the contact hole and sized and shaped to form a localized thick region in the layer of thin conductive material within the opening.
REFERENCES:
patent: 4754313 (1988-06-01), Takemue et al.
patent: 4754318 (1988-06-01), Momose et al.
patent: 4857481 (1989-08-01), Tam et al.
patent: 4866009 (1989-09-01), Matsuda
patent: 4933739 (1990-06-01), Harari
patent: 4994410 (1991-02-01), Sun et al.
patent: 4994893 (1991-02-01), Ozaki et al.
patent: 5028990 (1991-07-01), Kotaki et al.
patent: 5094981 (1992-03-01), Chung et al.
patent: 5150276 (1992-09-01), Gonzalez et al.
patent: 5200359 (1993-04-01), Pearey et al.
patent: 5209817 (1993-05-01), Ahmad et al.
patent: 5218219 (1993-06-01), Ajika et al.
patent: 5225699 (1993-07-01), Nakamura
patent: 5229307 (1993-07-01), Vora et al.
patent: 5229645 (1993-07-01), Nakashima
patent: 5243219 (1993-09-01), Katayama
patent: 5247197 (1993-09-01), Ema
patent: 5250830 (1993-10-01), Yagishita et al.
patent: 5296407 (1994-03-01), Eguchi
patent: 5317193 (1994-05-01), Watanbe
patent: 5321648 (1994-06-01), Dennison
patent: 5399890 (1995-03-01), Okada et al.
patent: 5440167 (1995-08-01), Iranmanesh
Micro)n Technology, Inc.
Thomas Tom
Williams Alexander Oscar
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