Fishing – trapping – and vermin destroying
Patent
1995-06-07
1998-03-24
Bowers, Jr., Charles L.
Fishing, trapping, and vermin destroying
501139, 3613215, H01L 2170, C04B 3546
Patent
active
057312206
ABSTRACT:
A semiconductor device and process for making the same are disclosed which incorporate a relatively large percentage of erbium dopant (1 to 5%) into a BST dielectric film 24 with small grain size (e.g. 10 nm to 50 nm). Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Apparently, properties of the thin film deposition and small grain size. including temperatures well below bulk BST sintering temperatures, allow the film to support markedly higher defect concentrations without erbium precipitation than are observed for bulk BST. For erbium doping levels generally between 1% and 3%, over an order of magnitude decrease in leakage current (compared to undoped BST) may be achieved for such films.
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Kulwicki Bernard M.
Tsu Robert
Bowers Jr. Charles L.
Donaldson Richard L.
Harris James E.
Radomsky Leon
Stoltz Richard A.
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