Methods, complexes, and system for forming metal-containing film

Details Methods, complexes, and system for forming metal-containing film Methods, complexes, and system for forming metal-containing film

1996-10-02

1999-07-13

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

556 1, H01L 2144

Patent

active

059240121

ABSTRACT:
A method of forming a film on a substrate using Group III metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

REFERENCES:
M. Hostalek et al., "Novel Organometallic Starting Materials for Group III-V Semiconductor Metal-Organic Chemical Vapour Deposition", Thin Solid Films, 174, 1-4 (1989).
H. Schumann et al., "Intramolecularly Stabilized Organoaluminium, -gallium and -indium Derivatives/Crystal Structures of 2093-2099 (1990).
P. Singer, "Filling Contacts and Vias: A Progress Report", Semiconductor Int'l, 89-90, 92, 94 (1996).
Versteeg et al., "Metalorganic Chemical Vapor Deposition By Pulsed Liquid Injection Using An Ultrasonic Nozzle: Titanium Dioxide on Sapphire from Titanium (IV) Isopropoxide", J. Amer. Cer. Soc., 78, 2763-2768 (1995).
W. Leung, et al., "Synthesis and structural characterisation of mono-and bi-nuclear cobolt(II) alkyls", J. Chem. Soc. Dalton Trans., 779-783 (1997).
M. Scherer et al., "Amine-Stablized Cyclopentadienyl Diisobutyl Aluminum Complexes as New Kinds of Precursors for the Deposition of Thin Aluminum Films by CVD", Chem. Vap. Deposition, 3(1), 33-35 (1997).

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