Integrated circuit having local interconnect for reducing signal

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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Details

438657, 438622, 438666, H01L 214763

Patent

active

059240083

ABSTRACT:
An integrated circuit is provided having an improved interconnect structure. The interconnect structure includes a power-coupled local interconnect which is always retained at VDD or VSS (i.e., ground) level. The local interconnect resides a dielectric-spaced distance below critical runs of overlying interconnect. The powered local interconnect serves to sink noise transients from the critical conductors to ensure that circuits connected to the conductors do not inoperably function. Accordingly, the local interconnect extends along a substantial portion of the conductor length, and is either wider or narrower than the conductor under which it extends. The local interconnect can either be polysilicon, doped polysilicon, polycide, refractory metal silicide, or multi-level refractory metal.

REFERENCES:
patent: 4392150 (1983-07-01), Courreges
patent: 4894693 (1990-01-01), Tigelaar et al.
patent: 5124774 (1992-06-01), Godhino et al.
patent: 5717242 (1998-02-01), Michael et al.

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