Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1995-09-08
1999-07-13
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438486, H01L 2100, H01L 2120
Patent
active
059239689
ABSTRACT:
In a producing a thin film transistor, a solution containing a metal element for promoting crystallization of silicon is added in contact with an amorphous silicon film, and then a silicide layer is formed by heating process. Further, after a region as crystal growth nucleus-is formed by patterning the silicide layer, laser light is irradiated during heating process. As a result, crystal-growth is performed from the region as crystal growth nucleus in the amorphous silicon film, thereby to form monodomain regions corresponding to a single crystal. Also, before the solution is added, the amorphous silicon film may be subjected to plasma treatment 30.
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Kusumoto Naoto
Teramoto Satoshi
Yamazaki Shunpei
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Lebentritt Michael S.
Niebling John F.
Semiconductor Energy Laboratory Co,. Ltd.
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