Method of manufacturing a semiconductor display device

Details Method of manufacturing a semiconductor display device Method of manufacturing a semiconductor display device

1997-09-24

1999-07-13

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438158, 438163, 438166, 438482, H01L 2100, H01L 2184, H01L 2120, H01L 2136

Patent

active

059239638

ABSTRACT:
The present invention provide a semiconductor device having a first insulating layer provided in contact with a side of an active layer in the direction of thickness thereof, a second insulating layer provided in contact with the other side of the active layer in the direction of the thickness thereof, a first gate electrode for applying a predetermined voltage to the active layer through the first insulating layer, and a second gate electrode for applying a predetermined voltage to the active layer through the second insulating layer. In the semiconductor device, a leak current between the drain and the source is suppressed, thereby obtaining a large driving current.

REFERENCES:
patent: 5385854 (1995-01-01), Batra et al.

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