Stress reduction in metal films by laser annealing

Details Stress reduction in metal films by laser annealing Stress reduction in metal films by laser annealing

1991-01-25

1992-03-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG90, 148DIG93, 427 531, 427124, 437173, 437246, H01L 21268, H01L 21428

Patent

active

050949772

ABSTRACT:
A method of processing a semiconductor wafer comprises, a) chemical vapor depositing (CVD) a metal layer atop a semiconductor substrate; and b) impinging laser energy upon the CVD metal layer at an optical fluence of from 0.05 Joules/cm.sup.2 to 0.30 Joules/cm.sup.2 for a period of time sufficient to relieve mechanical stress associated with the CVD metal layer yet insufficient to melt the CVD metal layer. In accordance with another aspect of the invention, such treatment method could also be used to form a desired silicide layer in the same step.

REFERENCES:
patent: 4439245 (1984-03-01), Wu
patent: 4751197 (1988-06-01), Wills
patent: 5032233 (1991-07-01), Yu et al.
McGonigal et al., "Improvements in Aluminum-Silicon Schottky Barriers Due to Processing with a Pulsed Ruby Laser", IEEE Letters, vol. EDL-2, No. 6, 6/81, pp. 149-151.
Davies et al., "Two-Channel Optical Pyrometry of Metals Irradiated by Picosecond Laser Pulses", J. Appl. Phys., 66(7), Oct. 1, 1989, pp. 3293-3297.

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