Precharge-enable self boosting word line driver for an embedded

Details Precharge-enable self boosting word line driver for an embedded Precharge-enable self boosting word line driver for an embedded

1998-05-08

1999-07-13

Nguyen, Viet Q.

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

36518911, 365204, 365193, G11C 700

Patent

active

059235969

ABSTRACT:
A method of driving a DRAM word line comprising initiating a word line active cycle from a leading edge of a row enable signal, applying a first voltage to a word line following and as a result of said leading edge, receiving a trailing edge of the enable signal and applying a boosted voltage to the word line following and as a result of the trailing edge.

REFERENCES:
patent: 5255224 (1993-10-01), Galbi et al.
patent: 5297104 (1994-03-01), Nakashima
patent: 5694355 (1997-12-01), Skjaveland et al.
patent: 5835438 (1998-11-01), Wu et al.

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