Device for reading cells of a memory

Static information storage and retrieval – Read/write circuit

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365203, 365210, G11C 1300

Patent

active

059235900

ABSTRACT:
A device for the reading of cells for a memory includes a high-gain current comparison circuit, including a first arm for the reproduction, by current mirror, of the reference current conducted by a reference cell and a second arm for the reproduction, by current mirror, of the read current of a selected memory cell. A current mirror structure is provided to reproduce the current of the first arm in the second arm so as to obtain the comparison and produce a representative voltage level at output.

REFERENCES:
patent: 4779272 (1988-10-01), Kohda et al.
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5381054 (1995-01-01), Standley
French Search Report from French application No. 9607374, filed Jun. 13, 1996.
A 1-Mbit CMOS EPROM with Enhanced Verification, Gastaldi et al., IEEE J of Solid-State Circuits, vol. 23, No. 5, Oct., 1988, pp. 1150-1155.

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