Silicon etching process

Details Silicon etching process Silicon etching process

1975-11-03

1978-01-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 156659, 204192E, 252 791, H01L 21306

Patent

active

040690962

ABSTRACT:
In the manufacture of semiconductor devices it is often times necessary to use photomasks. It has been found that silicon material is useful as see-through photomasks when deposited on a thin film of glass. After deposition the silicon is etched to form the mask. A suitable etchant, which may be used and which does not undercut patterned material formed over the silicon, may be derived from a composition of CCl.sub.4 + N.sub.2 + Cl.sub.2 and in some instances + HCl. This etchant may also be used in patterning polysilicon leads on various silicon devices such as charged coupled devices without undercutting of the leads.

REFERENCES:
patent: 3615956 (1971-10-01), Irving et al.
patent: 3743847 (1973-07-01), Boland
patent: 3923568 (1975-12-01), Bersin
patent: 3951709 (1976-04-01), Jacob
patent: 3975252 (1976-08-01), Fraser

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