Semiconductor device having an element inclusion region for redu

Details Semiconductor device having an element inclusion region for redu Semiconductor device having an element inclusion region for redu

1997-09-24

1999-07-13

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257384, 257590, 257617, H01L 2976, H01L 27082, H01L 2930

Patent

active

059230703

ABSTRACT:
A semiconductor device improves its electrical characteristics by reducing crystal defects in the vicinity of junction interfaces between a semiconductor layer, and a metal compound layer composed of semiconductor and metal elements, and between an epitaxial layer and its forming substrate. A pair of source/drain layers (52) are separately formed in a surface of a well layer (50), and a metal silicide layer (8) is formed thereon. A nitrogen inclusion region (9) is formed in the vicinity of a junction interface between the source/drain layers (52) and the metal silicide layer (8).

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patent: 5710438 (1998-01-01), Oda et al.
A. Murakoshi, et al., "Analysis of Interface Structure for Ultra-low Contact Resistivity", Extended Abstracts (The 57th Autumn Meeting, 1996); The Japan Society of Applied Physics, No. 2, Sep. 7, 1996, p. 593.
J.C. Phillips, "Bonds and Bands in Semiconductors", Academic Press New York and London, 1973, pp. 20-23.

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