Field-effect-controllable semiconductor component

Details Field-effect-controllable semiconductor component Field-effect-controllable semiconductor component

1997-09-30

1999-07-13

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257342, 257139, 257147, 257172, H01L 2978, H01L 2987

Patent

active

059230665

ABSTRACT:
A field-effect-controllable semiconductor component includes a semiconductor body with first and second surfaces. An inner zone of a first conduction type adjoins the first surface. An anode zone of the opposite, second conduction type adjoins the inner zone in the direction of the first surface and adjoins the second surface in the opposite direction. At least one first base zone of the second conduction type is embedded in the first surface. At least one source zone of the first conduction type is embedded in the first surface. At least one source electrode makes contact with the base zones and the source zones. At least one gate electrode is insulated from the semiconductor body and the source electrode by a gate oxide and at least partly covers parts of the first base zones appearing at the first surface. Intermediate cell zones contain the source zones. Trenches enclose the intermediate cell zones and are insulated from the intermediate cell zones by a gate oxide. Gate electrode pins in the trenches are connected to the gate electrode running on the first surface.

REFERENCES:
patent: 4791462 (1988-12-01), Blanchard
patent: 5321289 (1994-06-01), Baba
Syau et al IEEE Trans on Elec. Dev. vol. 41 No. 5 Comparison . . . UMOSFET's pp. 800-807, May 1994.

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