Semiconductor device incorporating capacitors

Details Semiconductor device incorporating capacitors Semiconductor device incorporating capacitors

1995-06-06

1999-07-13

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257306, 257310, H01L 2708, H01L 2976, H01L 2994, H01L 31119

Patent

active

059230622

ABSTRACT:
A semiconductor device has a memory cell array including MOS transistors and capacitors. Each capacitor include a first capacitor electrode, capacitor dielectric film, and a second capacitor electrode which confronts the first capacitor electrode with the dielectric film interposed therebetween. The first capacitor electrode includes a first-layer electrode having an upper and lower surfaces and a circumferential side surface, and a second-layer electrode which is connected electrically to the lower surface of the first-layer electrode and has a circumferential side surface located inner than the side surface of the first-layer electrode. The capacitor dielectric film is in contact with the upper surface and side surface of the first-layer electrode and spaced out from the side surface of the second-layer electrode. This electrode arrangement suppresses the emergence of a leakage current at the side surface of the second-layer electrode.

REFERENCES:
patent: 5111355 (1992-05-01), Anand et al.
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5406103 (1995-04-01), Ogawa
patent: 5486713 (1996-01-01), Koyama
patent: 5559666 (1996-09-01), Figura et al.
patent: 5568352 (1996-10-01), Hwang
Kuniaki Koyama et al, A Stacked Capacitor with (Ba.sub.x Sr.sub.1-x) TiO.sub.3 for 256M DRAM, IEEE 1991, pp. 823-826.

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