Semiconductor device having a plurality of conductive layers int

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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Details

257734, 257748, 257753, H01L 2348, H01L 2940, H01L 2946, H01L 2944

Patent

active

052332233

ABSTRACT:
A semiconductor device comprises a semiconductor substrate, plural conductive lead circuit layers, one or more intermediate insulating layers interposed between the conductive lead circuit layers, and plural hole made in respective intermediate insulating layer. The hole has both a width larger than a width of the connection portion of the first conductive lead circuit layer positioned under the via and a depth that at a least a top face of the connection portion of the first conductive lead circuit layer is exposed, and a tungsten plug has a width layer than the width of the connection portion of the first conductive lead circuit layer, formed over at least the top face of the connection portion of the lower lead circuit layer 3. A gap between the conductive plug and the inner wall of the hole, is filled up with insulating material to form a flat surface on which the second conductive lead circuit layer is formed.

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patent: 4882753 (1989-04-01), Pintchovski et al.
patent: 4920397 (1990-04-01), Ishijima
patent: 4926237 (1990-05-01), Sun et al.
patent: 4933303 (1990-06-01), Mo
patent: 4970574 (1990-11-01), Tsunenari

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