Etching a substrate: processes – Etching of semiconductor material to produce an article...
Patent
1996-06-07
1999-07-13
Nguyen, Nam
Etching a substrate: processes
Etching of semiconductor material to produce an article...
438 50, 438 52, 438 53, 438513, 438518, 438705, 438723, 438743, 438766, C23F 100
Patent
active
059222123
ABSTRACT:
A semiconductor sensor having a thin-film structure body, in which thin-film structure is prevented from bending due to the internal stress distribution in the thickness direction, is disclosed. A silicon-oxide film is formed as a sacrificial layer on a silicon substrate, and a polycrystalline-silicon thin film is formed on the silicon-oxide film. Thereafter, phosphorus (P) is ion-implanted in the surface of the polycrystalline-silicon thin film, and thereby the surface state of the polycrystalline-silicon thin film is modified. A portion of distribution of stress existing in the thickness direction of the polycrystalline-silicon thin film is changed by this modification, and stress distribution is adjusted. By removal of the silicon-oxide film, a movable member of the polycrystalline-silicon thin film is disposed above the silicon substrate with a gap interposed therebetween.
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Ao Kenichi
Gotoh Yoshitaka
Kano Kazuhiko
Kato Nobuyuki
Nara Kenichi
Nguyen Nam
Nippondenso Co., Ltd
VerSteeg Steven H.
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