System including a ferroelectric memory

Details System including a ferroelectric memory System including a ferroelectric memory

1997-09-18

2000-10-10

De Cady, Albert

Error detection/correction and fault detection/recovery

Pulse or data error handling

Digital data error correction

714768, G11C 2900

Patent

active

061311774

ABSTRACT:
A system with a ferroelectric memory has a low probability of soft error thereby decreasing the possibility of serious damage to the system that might result from soft errors. The ferroelectric memory is provided with an overwrite-inhibited memory block 122 for storing the OS (Operating System) and applications, and an overwrite-free memory block 123 which is a work area. The overwrite-inhibited memory block 122 includes a parity bit storage 125. A process for checking and correcting error performed about once a day. A command for starting the error checking and correcting procedures is triggered by a switch such as power source switch. When an error occurs in the ferroelectric memory 120, it is possible to recover the function of the system.

REFERENCES:
patent: 4688219 (1987-08-01), Takemae
patent: 5172339 (1992-12-01), Noguchi et al.
patent: 5359569 (1994-10-01), Fujitai et al.
patent: 5629888 (1997-05-01), Saito et al.
patent: 5754753 (1998-05-01), Smelser
patent: 5758056 (1998-05-01), Barr
patent: 5818771 (1998-10-01), Yasu et al.
IEEE International Solid-State Circuits Conference, Digest of Technical Papers, 1994, pp. 268-269.
Symposium on VLSI Technology, Digest of Technical Papers, 1990, pp. 15-16.
IEEE International Solid-State Circuits Conference, Digest of Technical Papers, 1987, pp. 22-23.

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