Platinum silicide Schottky diodes in a titanium-silicided CMOS-b

Details Platinum silicide Schottky diodes in a titanium-silicided CMOS-b Platinum silicide Schottky diodes in a titanium-silicided CMOS-b

1996-07-25

1997-09-30

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257384, 257369, 257476, 257485, H01L 2994, H01L 2945, H01L 2947, H01L 29872

Patent

active

056728980

ABSTRACT:
A method for constructing a Schottky diode in an integrated circuit on a semiconductor substrate (18) includes forming a mask layer (22) over a region (12) of the semiconductor substrate at which the Schottky diode is to be formed. First portions of said mask layer (22) are removed to expose first regions (11) of said substrate (18). At least one semiconductor processing step is performed prior to the formation of the Schottky diode, which has processing temperature above about 450.degree. C. in said first regions (11) of said substrate (18), such as forming TiSi.sub.2 (33-35) in portions of an FET device in the integrated circuit. A second portion of said mask layer (22) is removed to expose a second region (12) of said semiconductor substrate (18) at which said Schottky diode is to be formed, and a region (48) is formed in said semiconductor substrate (18) comprising a metal and a material of said semiconductor substrate (18) in said second region (12), such as platinum silicide. Additionally disclosed are techniques for forming contacts (139) to the Schottky diode (115) and other integrated circuit structures (107,108) at temperatures below those that would damage the Schottky diode (115).

REFERENCES:
patent: 3543052 (1970-11-01), Kahng
patent: 4874714 (1989-10-01), Eklund
patent: 5479040 (1995-12-01), Smayling et al.

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