Interconnect track connecting, on several metallization levels,

Details Interconnect track connecting, on several metallization levels, Interconnect track connecting, on several metallization levels,

1998-06-08

2000-10-10

Everhart, Caridad

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

438618, 438599, 438910, 257355, 257360, 257773, H01L 214763

Patent

active

061304603

ABSTRACT:
An interconnect track connects, on several metallization levels, an insulated gate of a transistor to a discharge diode within an integrated circuit. The interconnect track comprises a first track element extending under the highest metallization level, having a first end connected to the gate and having a length greater than a predetermined critical length. This first track element includes an interrupted track portion at a site a first distance less than the critical length away from the first end. This point is compatible with the placement of the metallization level above, and extends between two insulating layers on the same metallization level. The two branches of the interrupted portion are mutually connected by a metallic filling contact which also extends in the insulating support layer of the metallization level immediately above that containing the interrupted track portion.

REFERENCES:
patent: 5393701 (1995-02-01), Ko et al.
patent: 5457336 (1995-10-01), Fang et al.
patent: 5744838 (1998-04-01), Matsuo et al.
Uraoka et al., "Evaluation of Plasma Damage to Gate Oxide", IEICE Transaction son Electronics, vol. E77-C, No. 3, (Mar. 1, 1994), pp. 453-457.

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