Method of cleaning silicon surface

Details Method of cleaning silicon surface Method of cleaning silicon surface

1991-03-07

1992-03-31

Fisher, Richard V.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, H01L 21306

Patent

active

051005042

ABSTRACT:
In the first step, a silicon oxide film (21) on a silicon surface (22) is etched away using a CHF.sub.3 gas. After the silicon oxide film is removed, organic matter (23) of the C.sub.x F.sub.y group remains on the silicon surface. In the second step, the organic matter (23) is etched away using a NF.sub.3 gas. The silicon oxide film (21) is etched in preference to underlying silicon (22) by using the CHF.sub.3 gas. A F radical is easily formed from the NF.sub.3 gas used for removing the organic matter (23). At the time of forming this F radical, no residue is formed which makes the silicon surface (22) dirty. Consequently, a clear silicon surface (22) is obtained.

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Whitcomb, Selective, Anisotropic Etching of SiO.sub.2 and PSG, May 9-14, 1982, Conference Abstract, Electrochemical Society, Montreal, Canada, pp. 339-340.
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The Dictionary of Super-LSI, Science Form Company, Ltd., Mar. 31, 1988, p. 677 (English language translation).
Appl. Phys. Lett. 46 (6), 15 Mar. 1985, p. 589.
"The Removal Method of Carbon Contamination by R.I.E.", Extended Abstracts (The 48th Autumn Meeting, 1987) of The Japan Society of Applied Physics, No. 2, 19a-M-7, p. 562.

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