Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1994-02-07
1995-03-28
LaRoche, Eugene R.
Static information storage and retrieval
Read/write circuit
Differential sensing
365201, G11C 702
Patent
active
054023807
ABSTRACT:
An object of the present invention is to provide a semiconductor device that permits easy and efficient testing. A nonvolatile semiconductor memory including word lines WLi and bit lines BLi, a memory cell matrix 17 including nonvolatile memory cells Cij, a sense amplifier 15, a write/erase timing circuit 9 for performing timing control necessary for write and erase operations, and a status register 2 for storing the operating state of the memory at the completion of the operation of the circuit 9, wherein there are provided, outside the address of the memory cell matrix 17, two kinds of dummy cells, D1, D2, D3, . . . , whose values are fixed to different values that induce different outputs from the sense amplifier 15. A pass condition or a fail condition is generated by accessing the dummy cells.
REFERENCES:
patent: 4817052 (1989-03-01), Shinoda
patent: 5214604 (1993-05-01), Kato
patent: 5224070 (1993-06-01), Fandrich et al.
Kasa Yasushi
Kumakura Sinsuke
Watanabe Hisayoshi
Yamazaki Hirokazu
Fujitsu Limited
LaRoche Eugene R.
Zarabian A.
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