Method of making a semiconductor device with barrier and conduct

Details Method of making a semiconductor device with barrier and conduct Method of making a semiconductor device with barrier and conduct

1999-08-06

2000-10-10

Picardat, Kevin M.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438584, 438597, H01L 214763

Patent

active

061301507

ABSTRACT:
A method of making a semiconductor device includes forming at least one opening, having vertical sidewalls and a bottom, in a first dielectric layer adjacent a substrate. A second dielectric layer is formed to line the vertical sidewalls of the at least one opening, and has a relatively lower etch rate than the first dielectric layer. A conductive layer is deposited to fill the at least one opening and an upper surface of the semiconductor wafer is cleaned. The method preferably includes the steps of depositing a barrier layer lining the second dielectric layer and the bottom of the at least one opening, and chemically mechanically polishing the semiconductor wafer with the second dielectric layer protecting upper edges of the barrier layer and conductive layer. Preferably, the relatively lower etch rate of the second dielectric layer is a relatively lower wet etch rate based on a wet etch in hydrofluoric acid and the step of cleaning the upper surface of the semiconductor wafer comprises a wet etch in hydrofluoric acid. Thus, the conductive layer and the barrier layer are protected from a cleaning wet etch which may include the use of hydrofluoric acid. Localized corrosion of the conductive layer, which may be copper, is prevented.

REFERENCES:
patent: 5869393 (1999-02-01), Tseng
patent: 5897369 (1999-04-01), Jun

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