Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1997-02-28
2000-10-10
Dang, Thi
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
118723E, H05H 146, C23F 400
Patent
active
061298069
ABSTRACT:
A plasma processing apparatus and method are provided which are capable of easily performing precise working of a fine pattern on a large sized sample having a diameter of 300 mm or larger, and also capable of improving selectivity during micro processing. The apparatus includes a vacuum processing chamber, a plasma generating arrangement including a pair of electrodes, a sample table for mounting a sample to be processed inside the vacuum processing chamber and also serving as one of the electrodes, and an evacuating means for evacuating the vacuum processing chamber. The apparatus further includes a high frequency electric power source for applying an electric power of VHF band from 50 MHz to 200 MHz between the pair of electrodes. A magnetic field forming structure is also provided for forming a static magnetic field or a low frequency magnetic field larger than 10 gauss and smaller than 110 gauss in a direction intersecting an electric field generated between the pair of electrodes and in the vicinity thereof by the high frequency electric power source. The magnetic field forming structure is set so that a portion where a component of the magnetic field in a direction along the surface of the sample table becomes maximum is brought to a position on the opposite side of the sample table from the middle of the two electrodes. As a result, an electron cyclotron resonance region is formed between the upper and lower electrodes by the magnetic field and the electric field.
REFERENCES:
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 5387893 (1995-02-01), Oguriyama et al.
patent: 5423941 (1995-06-01), Komura et al.
patent: 5431769 (1995-07-01), Kisakibaru et al.
patent: 5587038 (1996-12-01), Cecchi et al.
Oda et al., "Generation of Electron Cyclotron Resonance Plasma in the VHF Band", Japanese Journal of Applied Physics, vol. 28, No. 10, Oct., 1989.
Kaji Tetsunori
Mitani Katsuhiko
Otsubo Toru
Tachi Shinichi
Tanaka Junichi
Dang Thi
Hitachi , Ltd.
LandOfFree
Plasma processing apparatus and plasma processing method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma processing apparatus and plasma processing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus and plasma processing method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2253696