Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-06-02
1995-03-28
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257657, 257412, 257404, H01L 2908, H01L 2910, H01L 2988, H01L 21265
Patent
active
054019940
ABSTRACT:
A semiconductor device with a non-uniformly and lightly doped channel comprises a gate electrode formed on a silicon substrate of first conductivity through the intermediary of a gate oxide dielectric film, and an extension of each side walls of the gate electrode composed of a thin polysilicon layer which is substantially thinner than the gate electrode, the silicon substrate having a channel region in which its central part is doped with ions of first conductivity at a concentration higher than in the silicon substrate and its part below the thin polysilicon layer is doped with ions of first conductivity at a concentration higher than in the central part, and having at an outer region of the channel region a source-drain region doped with ions of second conductivity.
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patent: 5210435 (1993-05-01), Roth et al.
"Gate-Induced Drain Leakage in LDD and Fully-Overlapped LDD MOSFETs", Moon et al., Symposium on VLSI Technology, (1991), p. 49.
International Electron Devices Meeting 1985 Washington D.C. Dec. 1-4, 1985, pp. 230-233; Christopher F. Codella et al: "Halo Doping Effects in Submicron DI-ODD Device Design".
IEEE Electron Device Letters, vol. 11, No. 6, Jun. 1990, New York pp. 253-255; James R. Pfiester et al: "A Selectively Deposited Poly-Gate ITLDD Process with Self-Aligned LDD/Channel Implementation".
IBM Technical Disclosure Bulletin, vol. 22, No. 6, Nov. 1979, New York R. C. Varshney "Double Polysilicon Depletion-Mode MOS Transistor Structure".
IEDM Tech. Dig. (1990), 391, Y. Okumura et al, "A Novel Source-to-Drain Nonuniformly Doped Channel (NUDC) MOSFET for High Current Drivability and Threshold Voltage Controllability".
Hardy David B.
Limanek Robert P.
Sharp Kabushiki Kaisha
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