Non-volatile memory

Details Non-volatile memory Non-volatile memory

1993-06-30

1995-03-28

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257322, 257298, H01L 2702, H01L 2968, H01L 2978, H01L 2992

Patent

active

054019931

ABSTRACT:
A non-volatile memory includes a single transistor having a semiconductor substrate, source and drain diffusion layers formed on a surface of the semiconductor substrate, and a gate electrode provided on the semiconductor substrate with a gate insulating film interposed between them. The non-volatile memory further includes a programmable insulating film provided in self-alignment between the gate electrode and at least one of the source and drain diffusion layers and the programmable insulating film is broken down by a voltage applied to the gate electrode so as to execute programming.

REFERENCES:
patent: 4491857 (1985-01-01), McElroy
patent: 4507756 (1985-03-01), McElroy
patent: 4507757 (1985-03-01), McElroy
patent: 4823181 (1989-04-01), Moshen et al.
patent: 4878100 (1989-10-01), McDavid
patent: 4906587 (1990-03-01), Blake
patent: 5049957 (1991-09-01), Inoue et al.
patent: 5060034 (1991-10-01), Shimizu et al.
Mizutani et al., `A New EPROM Cell with a Side-Wall Floating Gate . . . ` IEDM, pp. 635-637, 1985.

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