Method of repairing overerased cells in a flash memory

Details Method of repairing overerased cells in a flash memory Method of repairing overerased cells in a flash memory

1991-10-09

1993-08-17

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Erase

365185, 365200, 365900, G11C 700, G11C 1600

Patent

active

052375358

ABSTRACT:
A method of repairing overerased cells in a flash memory array including a column having a first cell and a second cell is described. Repair begins by determining whether a first cell is overerased and applying a programming pulse if so. Next, the second cell is examined to determine whether it is overerased. A programming pulse is applied to the second cell if it is overerased. Afterward, if either of the cells was overerased then the repair pulse voltage level is incremented. These steps are repeated until none of the cells on the column is identified as overerased.

REFERENCES:
patent: 4357685 (1982-11-01), Daniele et al.
patent: 4742491 (1988-05-01), Liang et al.
patent: 4797856 (1989-01-01), Lee et al.
patent: 4841482 (1989-06-01), Kreifels et al.
patent: 4860261 (1989-08-01), Kreifels et al.
patent: 5060195 (1991-10-01), Gill et al.
patent: 5065364 (1991-11-01), Atwood et al.
patent: 5097444 (1992-03-01), Fong
patent: 5122985 (1992-06-01), Santin
patent: 5138576 (1992-08-01), Madurawe
patent: 5139935 (1992-07-01), Ashmore, Jr.

Affiliated with

Also associated with

Rating

Method of repairing overerased cells in a flash memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of repairing overerased cells in a flash memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of repairing overerased cells in a flash memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2249856