Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-01-10
1999-04-20
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, 257401, 257408, 438163, 438184, 438230, 438514, 438694, H01L 2972
Patent
active
058959556
ABSTRACT:
A transistor and transistor fabrication method are presented where a sequence of layers are formed and either entirely or partially removed upon sidewall surfaces of a gate conductor. The formation and removal of layers produces a series of laterally spaced surfaces to which various implants can be aligned. Those implants, placed in succession produce a highly graded junction having a relatively smooth doping profile. The multilayer spacer structure comprises a polysilicon spacer interposed between a grown oxide and an etch stop. The polysilicon spacer is formed by an anisotropic etch, and the pre-existing etch stop prevents the anisotropic etch from damaging the source/drain and gate conductor regions beneath the etch stop. Further, the etch stop allows removal of the overlying oxide as well as the entire polysilicon during times when the multi-layer spacer is entirely removed. Removal of the various layers does not damage the underlying substrate due to the presence of the etch stop. The etch stop preferably comprises a nitride layer overlying an oxide layer, wherein the oxide layer can either be deposited or grown.
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Wolf et al., Silicon Processing for the VLSI Era, vol. 1:Process Technology, Lattice Press 1986, p. 183.
Fulford Jr. H. Jim
Gardner Mark I.
Hause Fred N.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Wojciechowicz Edward
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