MOSFET structure and fabrication process implemented by forming

Details MOSFET structure and fabrication process implemented by forming MOSFET structure and fabrication process implemented by forming

1996-04-05

1999-04-20

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257329, 257331, 257339, 257341, 257342, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058959513

ABSTRACT:
This invention discloses a MOSFET device which includes a plurality of vertical cells each includes a source, a drain, and a channel for conducting source-to-drain current therethrough. Each of the vertical cells is surrounded by a polysilicon layer acting as a gate for controlling the source-to-drain current through the channel. The MOSFET device further include a plurality of doping trenches filled with trench-filling materials, The MOSFET device further includes a plurality of deep-doped regions disposed underneath the doping trenches wherein the deep-doped region extends downwardly to a depth which is substantially a sum of an implant depth of the deep-doped region and a vertical diffusion depth below a bottom of the doping trenches.

REFERENCES:
patent: 4567641 (1986-02-01), Baliga et al.
patent: 4960723 (1990-10-01), Davies
patent: 5648670 (1997-07-01), Blanchard

Affiliated with

Also associated with

Rating

MOSFET structure and fabrication process implemented by forming does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOSFET structure and fabrication process implemented by forming , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOSFET structure and fabrication process implemented by forming will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2249599