Single polysilicon neuron MOSFET

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257318, 257319, 257371, 257379, H01L 27108

Patent

active

058959459

ABSTRACT:
A MOSFET device with a substrate covered with dielectric material with the device including a plurality of buried conductors capacitively coupled to a polysilicon electrode, made by the steps comprising

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