Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-01-31
1999-04-20
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257318, 257319, 257371, 257379, H01L 27108
Patent
active
058959459
ABSTRACT:
A MOSFET device with a substrate covered with dielectric material with the device including a plurality of buried conductors capacitively coupled to a polysilicon electrode, made by the steps comprising
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Pan Hong-Tsz
Wu Chung-Cheng
Yang Ming-Tzong
Crane Sara
United Microelectronics Corporation
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