Method of manufacturing a semiconductor device capable of rapidl

Details Method of manufacturing a semiconductor device capable of rapidl Method of manufacturing a semiconductor device capable of rapidl

1996-07-03

1998-03-03

Breneman, R. Bruce

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438788, 427575, 427579, H01L 2100

Patent

active

057233861

ABSTRACT:
In a method of manufacturing a semiconductor device having a multilayer interconnection structure, when a silicon oxide film is formed onto an electric wiring on a semiconductor substrate by the use of plasma deposition, a first high frequency wave of a constant value is provided for producing plasma while a second high frequency wave of a pulsed amplitude having a predetermined pulse interval and a predetermined rest interval is supplied onto said semiconductor substrate. Silane gas, oxygen gas and argon gas are employed as deposition gases, wherein the argon gas is periodically supplied during a pulsed interval.

REFERENCES:
patent: 4732761 (1988-03-01), Machida et al.
patent: 4891118 (1990-01-01), Ooiwa et al.
patent: 5322806 (1994-06-01), Kohno et al.
patent: 5435886 (1995-07-01), Fujiwara et al.
Journal of Vaccum Society Technology, p. 818, B4(4), Jul./Aug. 1986; 0734-211x/86/040818-04S01.00;SiO.sub.2 Planarization Technology With Biasing and Electron Cyclotron Resonance Plasma Deposition for Submicron Interconnections.

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