Semiconductor substrate treatment method

Details Semiconductor substrate treatment method Semiconductor substrate treatment method

1995-03-17

1998-03-03

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438694, 438710, 438475, 427535, 427539, H01L 2100

Patent

active

057233837

ABSTRACT:
According to a semiconductor substrate treatment method, a surface or vicinity of a semiconductor substrate is deactivated by exposing the semiconductor substrate to a plasma atmosphere in which a gas containing at least hydrogen atoms is excited. A treatment is performed on the deactivated substrate surface. The treated substrate surface is activated by heating the semiconductor substrate.

REFERENCES:
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patent: 5281546 (1994-01-01), Possin et al.
Chih-Tang Sah, Jack Yuan-Chen Sun and Joseph Jeng-Tao Tzou, "Deactivation of the boron acceptor in silicon by hydrogen", Appl. Phys. Lett. 43 (2), 15 Jul. 1983.
S.J. Pearton, Michael Stavola and J.W. Corbett, "Configurations and Properties of Hydrogen in Crystalline Semiconductors", Materials Science Forum vols. 38-41 (1989) pp. 25-37.
S.J. Pearton and J. Lopata, "Dissociation of P-H, As-H, and Sb-H complexes in n-type Si", Appl. Phys. Lett. 59 (22), 25 Nov. 1991, pp. 2841-2483.
R.A. Levy and M.L. Green, "Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications", Journal of the Electrochemical Society Reviews and News, Feb. 1987, pp. 37C-49C.

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