Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-07-15
1993-08-17
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257379, 257392, 257394, H01L 2702, H01L 2968, H01L 2978
Patent
active
052371956
ABSTRACT:
A semiconductor integrated circuit arrangement prevents the occurrence of latch up. The circuit includes a first semiconductor island of a first conductivity type and a second semiconductor island of the first conductivity type located within a base semiconductor region of a second conductivity type. A resistive diffusion region of the second conductivity type is located within the first semiconductor island region. The second semiconductor region is connected to ground. A high potential electrode connected to the resistive diffusion region is also connected to the first semiconductor island region. In this manner, an emitter and a base of a parasitic transistor of the integrated circuit are connected together to prevent the parasitic transistor from operating in a conductive state, thereby preventing latch up.
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G. J. Hadamard, "Integrated Circuits Having Reduced Parasitic Thyratron Effects", IBM Technical Disclosure Bulletin, vol. 14, No. 4, Sep. 1971, p. 1076.
Hille Rolf
Matsushita Electric - Industrial Co., Ltd.
Saadat Mahshid
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