Power semiconductor device

Details Power semiconductor device Power semiconductor device

1991-04-24

1993-08-17

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257467, 307354, H01L 2910

Patent

active

052371948

ABSTRACT:
A power semiconductor device is constructed by integrating a DMOS transistor and a lateral MOS transistor on the same semiconductor chip. The lateral MOS transistor is formed within a well with a conductivity type which is the same as the conductivity type of the source region of the DMOS transistor. The gate voltage is monitored at the time of connecting the gate and the drain of the lateral MOS transistor and of driving it at a constant current. When the gate voltage drops below a predetermined value, the driving of the DMOS transistor is stopped. The breakdown of the power semiconductor device due to heating can thus be prevented.

REFERENCES:
patent: 4893158 (1990-01-01), Mihara et al.
patent: 4896199 (1990-01-01), Tsuzuki et al.
patent: 4928159 (1990-05-01), Mihara et al.
patent: 4931844 (1990-05-01), Zommer
patent: 5063307 (1991-11-01), Zommer
patent: 5100829 (1992-03-01), Fay et al.

Affiliated with

Also associated with

Rating

Power semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2246239