Plasma developable electron resist process

Details Plasma developable electron resist process Plasma developable electron resist process

1981-06-19

1983-05-31

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

430312, 430313, 430296, G03C 524

Patent

active

043861520

ABSTRACT:
A method of fabricating a negative electron resist pattern for microcircuit is disclosed which combines electron beam resist exposure with dry plasma etch developing. The technique utilizes a coating of a barrier polymer over the negative electron resist film prior to exposure to the electron beam film to prevent vacuum sublimation of the constituents of the negative electron resist film.

REFERENCES:
patent: 4126466 (1978-11-01), Roos
patent: 4241165 (1980-12-01), Hughes et al.
"Plasma-Developed X-Ray Resists", Gary N. Taylor and Thomas M. Wolf, Bell Laboratories, Murray Hill, N.J., 07974.
"A Negative-Working Plasma-Developed Photoresist", Gary N. Taylor, Thomas M. Wolf, and Michael R. Goldrick, Bell Laboratories, Murray Hill, N.J., 07974.

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